Reliable metal bumps on top of I/O pads after removal of test probe marks

ABSTRACT

A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or resistors are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.

This application is a continuation of application Ser. No. 10/937,543,filed on Sep. 9, 2004, now pending.

RELATED PATENT APPLICATIONS

This application is related to MEG00-008CBBC, Ser. No. 10/303,451, filedon Nov. 25, 2002, MEG02-016, Ser. No. 10/445,558, filed on May 27, 2003,MEG02-017, Ser. No. 10/445,559, filed on May 27, 2003, and MEG02-018,Ser. No. 10/445,560, filed on May 27, 2003, all assigned to a commonassignee, and all are herein incorporated by reference in theirentirety.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The invention relates to the manufacturing of high performance, highcurrent, low power, and/or low voltage Integrated Circuit (IC's), and,more specifically, to methods of creating high performance, highcurrent, low power, and/or low voltage electrical components on thesurface of a semiconductor substrate.

(2) Description of the Related Art

The continued emphasis in the semiconductor technology is to createimproved performance semiconductor devices at competitive prices. Thisemphasis over the years has resulted in extreme miniaturization ofsemiconductor devices, made possible by continued advances ofsemiconductor processes and materials in combination with new andsophisticated device designs. Most of the semiconductor devices that areat this time being created are aimed at processing digital data. Thereare however also numerous semiconductor designs that are aimed atincorporating analog functions into devices that simultaneously processdigital and analog data, or devices that can be used for the processingof only analog data. One of the major challenges in the creation ofanalog processing circuitry (using digital processing procedures andequipment) is that a number of the components that are used for analogcircuitry are large in size and are therefore not readily integratedinto devices that typically have feature sizes that approach thesub-micron range. The main components that offer a challenge in thisrespect are capacitors and inductors, since both these components are,for typical analog processing circuits, of considerable size.

When the dimensions of Integrated Circuits are scaled down, the cost perdie is decreased while some aspects of performance are improved. Themetal connections which connect the Integrated Circuit to other circuitor system components become of relative more importance and have, withthe further miniaturization of the IC, an increasingly negative impacton circuit performance. The parasitic capacitance and resistance of themetal interconnections increase, which degrades the chip performancesignificantly. Of most concern in this respect is the voltage drop alongthe power and ground buses and the RC delay of the critical signalpaths. Attempts to reduce the resistance by using wider metal linesresult in higher capacitance of these wires.

Since the 1960's, sputtered aluminum has become a main stream ICinterconnection metal material. The aluminum film is sputtered coveringthe whole wafer, and then the metal is patterned using photolithographymethods and dry and/or wet etching. It is technically difficult andeconomically expensive to create thicker than 2 .mu.mmicrometersaluminum metal lines due to the cost and stress concerns of blanketsputtering. About 1995, damascene copper metal became an alternative forIC metal interconnection. In damascene copper, the insulator ispatterned and copper metal lines are formed within the insulatoropenings by blanket electroplating copper and chemical mechanicalpolishing (CMP) to remove the unwanted copper. Electroplating the wholewafer with thick metal creates large stress and carries a very highmaterial (metal) cost. Furthermore, the thickness of damascene copper isusually defined by the insulator thickness, typically chemical vapordeposited (CVD) oxides, which does not offer the desired thickness dueto stress and cost concerns. Again it is also technically difficult andeconomically expensive to create thicker than 2 .mu.mmicrometers copperlines.

Current techniques for building an inductor on the surface of asemiconductor substrate use fine-line techniques whereby the inductor iscreated under a layer of passivation. The current fine-line techniques,either using sputtered aluminum or damascene copper, cannot provideinductors with a high quality factor due to the high resistance offine-line metals. The resistance of the metal traces used to form theinductor coils will consume electrical energy. In addition, thefine-line techniques further imply close physical proximity between thecreated inductor and the surface of the substrate over which theinductor has been created (typically less than 10 .mu.mmicrometers),resulting in high electromagnetic losses in the silicon substrate whichin turn further results in reducing the Q value of the inductor.

U.S. Pat. No. 5,212,403 (Nakanishi) shows a method of forming wiringconnections both inside and outside (in a wiring substrate over thechip) for a logic circuit depending on the length of the wireconnections.

U.S. Pat. No. 5,501,006 (Gehman, Jr. et al.) shows a structure with aninsulating layer between the integrated circuit (IC) and the wiringsubstrate. A distribution lead connects the bonding pads of the IC tothe bonding pads of the substrate.

U.S. Pat. No. 5,055,907 (Jacobs) discloses an extended integrationsemiconductor structure that allows manufacturers to integrate circuitrybeyond the chip boundaries by forming a thin film multi-layer wiringdecal on the support substrate and over the chip.

U.S. Pat. No. 5,106,461 (Volfson et al.) teaches a multi layerinterconnect structure of alternating polyimide (dielectric) and metallayers over an IC in a TAB structure.

U.S. Pat. No. 5,635,767 (Wenzel et al.) teaches a method for reducing RCdelay by a PBGA that separates multiple metal layers.

U.S. Pat. No. 5,686,764 (Fulcher) shows a flip chip substrate thatreduces RC delay by separating the power and I/O traces.

U.S. Pat. No. 6,008,102 (Alford et al.) shows a helix inductor using twometal layers connected by vias.

U.S. Pat. No. 5,372,967 (Sundaram et al.) discloses a helix inductor.

U.S. Pat. No. 5,576,680 (Ling) and U.S. Pat. No. 5,884,990 (Burghartz etal.) show other helix inductor designs.

U.S. Pat. No. 6,495,442 to M. S. Lin et al and U.S. Pat. No. 6,383,916to M. S. Lin, add, in a post passivation processing sequence, a thicklayer of dielectric over a layer of passivation and layers of wide andthick metal lines on top of the thick layer of dielectric.

Co-pending U.S. patent application Ser. Nos. 10/445,558, 10/445,559, and10/445,560 apply the post-passivation process of U.S. Pat. No. 6,383,916in addition to creating high quality electrical components, such as aninductor, a capacitor or a resistor, on a layer of passivation or on thesurface of a thick layer of dielectric.

SUMMARY OF THE INVENTION

It is the primary objective of the invention to improve the RFperformance of High Performance Integrated Circuits.

Another objective of the invention is to provide a method for thecreation of a high-Q inductor.

Another objective of the invention is to provide a method for thecreation of high quality inductors, capacitors, or resistors inintegrated circuits.

Yet another objective of the invention is to provide a method formounting discrete electrical components on integrated circuits in apost-passivation process.

It is yet another objective of the invention to provide a method forfabricating post-passivation metal interconnections and devices having amuch smaller RC product than that of the fine line metalinterconnections under the passivation layer.

A further objective of the invention is to provide a method forfabricating post-passivation metal interconnections and devices having astructure different from the structure of the fine line metalinterconnections underlying the passivation layer.

A still further objective of the invention is to provide a method forfabricating post-passivation metal interconnections and devices by aselective deposition process.

A still further objective is to provide post-passivation metalinterconnection and device structures having a structure different fromthe structure of the fine line metal interconnections underlying thepassivation layer.

Another objective is to provide post-passivation metal interconnectionand device structures having a much smaller RC product than that of thefine line metal interconnections under the passivation layer.

In accordance with the objectives of the invention, a method of formingpost-passivation interconnections and devices is achieved. Asemiconductor substrate is provided. Fine line metal interconnectioncomprising one or more layers of metals overlying the semiconductorsubstrate is provided formed by a blanket metal deposition process andoverlaid with a passivation layer, wherein the passivation layercomprises at least one passivation opening through which is exposed atleast one top level metal contact point on the fine line metalinterconnection. A post-passivation metal structure comprising one ormore layers of metals formed over the passivation layer is formed by aselective metal deposition process and connected to at least one toplevel metal contact point wherein the at least one passivation openingis formed to a width larger than about 0.1 um.

Also accordance with the objectives of the invention, a post-passivationmetal interconnection and device structure is achieved. The postpassivation system of the invention comprises a semiconductor substrate,fine line metal interconnection comprising one or more layers of metalsoverlying the semiconductor substrate, a passivation layer overlying thefine line metal interconnection, wherein the passivation layer comprisesat least one passivation opening through which is exposed at least onetop level metal contact point on the fine line metal interconnection,and a post-passivation metal structure comprising one or more layers ofmetals formed over the passivation layer and connected to at least onetop level metal contact point wherein the passivation opening's width islarger than about 0.1 um.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional representation of the interconnection schemeshown in U.S. Pat. No. 6,383,916.

FIG. 2 is a cross sectional representation of an inductor of theinvention, created on a thick layer of polyimide.

FIGS. 3-9 depict, in cross-sectional form, the creation of gold metalstructures of the invention, through a layer of polymer.

FIGS. 10-14 depict the creation of copper metal structures of theinvention, through a layer of polymer.

FIG. 15 shows an inductor of the invention above a layer of passivation.

FIG. 16 a is a cross sectional representation of a transformer accordingto the invention, formed over a polymer layer, over a layer ofpassivation.

FIG. 16 b is a cross sectional representation of a transformer accordingto the invention, with the bottom coil formed on a layer of passivation.

FIGS. 17 a-17 c are cross sectional representations of a capacitor ofthe invention, formed over a polymer layer over passivation.

FIG. 18 is a cross sectional representation of a resistor of theinvention, formed over a passivation layer.

FIGS. 19 a-19 b are cross sectional representations of a resistor of theinvention, formed over a thick polymer layer, over a passivation layer.

FIG. 20 is a cross sectional representation of a silicon substrate overwhich a discrete electrical component has been mounted, on the top of athick polymer layer, using surface mount technology.

FIG. 21 is a cross sectional representation of a silicon substrate,having a passivation layer on the surface of which a discrete electricalcomponent has been mounted, using surface mount technology.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The post-passivation process, described in U.S. Pat. Nos. 6,383,916 and6,495,442, to the same inventor as the current invention, teaches anIntegrated Circuit structure where re-distribution and interconnectmetal layers are created in layers of dielectric over the passivationlayer of a conventional Integrated Circuit (IC). A layer of passivationis deposited over the IC, a thick layer of polymer is alternatelydeposited over the surface of the layer of passivation, and thick, widemetal lines are formed over the passivation.

U.S. Pat. No. 6,303,423 and the co-pending related patent applications,also assigned to a common assignee as the current invention, address,among other objectives, the creation of an inductor whereby the emphasisis on creating an inductor of high Q value above the passivation layerof a semiconductor substrate. The high quality of the inductor of theinvention allows for the use of this inductor in high frequencyapplications while incurring minimum loss of power. The inventionfurther addresses the creation of a capacitor and a resistor on thesurface of a silicon substrate whereby the main objective (of theprocess of creating a capacitor and resistor) is to reduce parasiticsthat are typically incurred by these components in the underlyingsilicon substrate.

Referring now more specifically to FIG. 1, there is shown a crosssection of one implementation of U.S. Pat. No. 6,383,916. The surface ofsilicon substrate 10 has been provided with transistors 11 and otherdevices (not shown in FIG. 1). The surface of substrate 10 is covered byan interlevel dielectric (ILD) layer 12, formed over the devices.

Layers 14 represent metal and dielectric layers that are typicallycreated over ILD 12. Layers 14 contain one or more layers of dielectric,interspersed with one or more metal interconnect lines 13 that make up anetwork of electrical connections. At a top metal layer are points 16 ofelectrical contact. These points 16 of electrical contact can establishelectrical interconnects to the transistors and other devices 11 thathave been provided in and on the surface of the substrate 10. Thesemetal layers are referred to as fine line metal interconnections.Typically, the intermetal dielectric (IMD) layers comprise silicon-basedoxides, such as silicon dioxide formed by a chemical vapor deposition(CVD) process, CVD TEOS oxide, spin-on-glass (SOG), fluorosilicate glass(FSG), high density plasma CVD oxides, or a composite layer formed by aportion of this group of materials. The IMD layers typically have athickness of between about 1000 and 10,000 Angstroms. The fine linemetal interconnections are typically formed by sputtering aluminum or analuminum alloy and patterning the aluminum to form the fine metal lines.Alternatively, the fine lines may be formed by a copper damasceneprocess. In the copper damascene process, the copper is protected by anadhesion/barrier layer not only underlying the copper, but alsosurrounding the copper at the sidewalls of the line through the IMD.These fine lines typically have a thickness of between about 1000 and10,000 Angstroms. In the fabrication process of the fine line metalinterconnections, a typical clean room environment of class 10 or lessis required; that is, having no more than 10 particles larger than 0.5microns in any given cubic foot of air. The fine line IC metal isfabricated using 5.times. steppers or scanners or better and using aphotoresist layer having thickness of less than 5 microns.

A passivation layer 18, formed of, for example, a composite layer ofsilicon oxide and silicon nitride, is deposited over the surface oflayers 14, and functions to prevent the penetration of mobile ions (suchas sodium ions), moisture, transition metal (such as gold, copper,silver), and other contamination. The passivation layer is used toprotect the underlying devices (such as transistors, polysiliconresistors, poly-to-poly capacitors, etc.) and the fine-line metalinterconnection.

The key steps of U.S. Pat. No. 6,383,916, begin with the deposition ofan optional thick layer 20 of polymer that is deposited over the surfaceof passivation layer 18. Access must be provided to points of electricalcontact 16; for this reason, a pattern of openings 22, 36 and 38 isformed through the polymer layer 20 and the passivation layer 18. Thepattern of openings 22, 36 and 38 aligns with the pattern of electricalcontact points 16. Contact points 16 are, by means of the openings22/36/38 that are created in the layer 20 of polymer, electricallyextended to the surface of layer 20.

Layer 20 is a polymer, and is preferably polyimide. Polymer 20 mayoptionally be photosensitive. Examples of other polymers that can beused include benzocyclobutene (BCB), parylene or epoxy-based materialsuch as photoepoxy SU-8 (available from Sotec Microsystems, Renens,Switzerland).

After formation of openings 22/36/38, metallization is performed tocreate patterned thick, wide metal layers 26 and 28, and to connect tocontact points 16. Lines 26 and 28 can be of any design in width andthickness to accommodate specific circuit design requirements, which canbe used for power distribution, or as a ground or signal bus.Furthermore, metal 26 may be connected off-chip through wire bonds orsolder bumps.

Contact points 16 are located on top of a thin dielectric (layers 14,FIG. 1), and the pad size must be kept small to minimize capacitancewith underlying metal layers. In addition, a large pad size willinterfere with the routing capability of the layer of metal.

Layer 20 is a thick polymer dielectric layer (for example, polyimide)having a thickness in excess of 2 .mu.mmicrometers (after curing). Therange of the polymer thickness can vary from 2 .mu.mmicrometers to 150.mu.mmicrometers, dependent on electrical design requirements. For athicker layer of polyimide, the polyimide film can be multiple coatedand cured. The polymer is formed by spin-on, printing, or laminating.

U.S. Pat. No. 6,383,916 B1 allows for the interconnection of circuitelements at various distances, over the path 30/32/34 shown in FIG. 1,using the thick, wide (as compared to the underlying “fine line”metallization in layers 14) metal of 28. Thick, wide metal 28 hassmaller resistance and thicker dielectric 20 has smaller capacitancethan the fine line metallization 14 and is also easier and more costeffective to manufacture.

In more detail, the clean room environment of the post-passivation metalprocess can be of a class 100 or more; that is, having 100 or moreparticles larger than 0.5 microns in any given cubic foot of air. Duringphotolithography in the post-passivation metal process, aligners or1.times. steppers are used with a photoresist having a thickness ofgreater than 5 microns. The thick, wide metal lines have a thickness ofbetween about 2 and 100 microns and a width larger than about 2 microns.The lines can be very wide, as would be used for power and groundplanes.

FIG. 2 shows how the interconnect aspect of U.S. Pat. No. 6,383,916, canbe modified to form an inductor on the surface of the thick layer 20 ofpolyimide. The inductor is created in a plane that is parallel with thesurface of the substrate 10 whereby this plane however is separated fromthe surface of the substrate 10 by the combined heights of layers 12,14, 18, and 20. FIG. 2 shows a cross section 40 of the inductor taken ina plane that is perpendicular to the surface of substrate 10. The wideand thick metal will also contribute to a reduction of the resistiveenergy losses. Furthermore, the low resistivity metal, such as gold,silver and copper, can be applied using electroplating; the thicknesscan be about 20 .mu.mmicrometers.

By increasing the distance between the inductor and the semiconductorsurface, as compared to prior art approaches in which the inductor isformed under the passivation, the electromagnetic field in the siliconsubstrate will be reduced as the distance is increased, and the Q valueof the inductor can be increased. The inductor overlies the layer ofpassivation and by, in addition, creating the inductor on the surface ofa thick layer of dielectric (such as a polymer) formed over thepassivation layer. In addition, by using wide and thick metal for thecreation of the inductor, the parasitic resistance is reduced.

In an important feature of the invention, the openings 19 in passivationlayer 18 may be as small as 0.1 um wide. Thus, contact pads 16 may alsobe nearly as small, which allows for greater routing capability in thetop fine-line metallization layer, and lower capacitance.

In another important feature of the invention, the openings 22/36/38 inpolymer 20 are larger than the passivation openings 19. The polymeropenings 22/36/38 are aligned with passivation openings 19. The largerpolymer openings allow for relaxed design rules, simpler openingformation, and the use of a thick metal layer for the post-passivationmetallization of the invention.

FIG. 2 illustrates interconnect structure 26 as well as inductor 40,wherein the inductor includes two contacts 41 and 43, through polymerlayer 20 to contact pads 16.

In another feature of the invention, the FIG. 2 structure may be coveredby an additional layer of polymer (not shown).

Referring now to FIGS. 3-8, further details are provided for forming thepost passivation inductor (and other passive devices) of the invention.In FIG. 3, a substrate 80 is shown, which could be an underlyingdielectric layer, and a metal contact point 81, preferably comprisingaluminum. A layer 84 of passivation has been patterned creating anopening 82 through layer 84 that exposes the contact pad 81. Layer 86 isa layer of polymer, preferably polyimide, as earlier described,deposited over the layer 84 of passivation, including the exposedsurface of the contact pad. Polymer layer 86, such as polyimide, istypically spun on. For some thick layers of polymer, the polymer can bescreen printed. Alternately, a laminated dry film polymer may be used.

FIG. 4 illustrates forming an opening 87 in polymer 86, wherein thepolymer opening 87 is larger than passivation opening 82. Opening 87 isdepicted having sloped sides 85. Polymer layer 86 is exposed anddeveloped to form opening 87, which initially has vertical sidewalls.However, the subsequent curing process causes the sidewalls to have aslope 85, and a opening 87 to have a resultant partially conical shape.The sidewall slope 85 may have an angle of 45 degrees or more, and istypically between about 50 and 60 degrees. It may be possible to formthe sidewalls with an angle as small as 20 degrees.

By creating relatively large vias through the layer of polyimide orpolymer, aligned with smaller vias created through the underlying layerof passivation, aligned with underlying sub-micron metal layer, it isclear that the sub-micron metal vias can effectively be enlarged whenprogressing from the sub-micron metal layer to the level of the thick,wide metal.

Continuing to refer to FIG. 4, one metallization system and selectivedeposition process for forming the post passivation interconnect andinductor of the invention is depicted. First, a glue/barrier layer 88,preferably comprising TiW, TiN, TaN, Ti, or Cr is deposited, preferablyby sputtering to a thickness of between about 500 and 5,000 Angstroms. Agold seed layer 90, is next sputter deposited over the glue/barrier 88,to a thickness of between about 300 and 3,000 Angstroms.

Referring now to FIG. 5, a bulk layer 92 of gold (Au) is next formed byelectroplating, to a thickness of between about 1 and 20.mu.mmicrometers. Electroplating is preceded by deposition of a thickphotoresist 94 (to a thickness greater than the desired bulk metalthickness), and conventional lithography to expose the gold seed layer90 in those areas where electroplating thick metallization is desired.

Thus, a selective deposition process forms the post-passivation metalstructure. An advantage of the selective deposition process of theinvention is a minimization of wasted material. In the selectivedeposition process, the metal is electroplated only where it is needed.In contrast, in the standard copper damascene process used for fine linemetallization, copper is electroplated everywhere and then etched orpolished away where it is not needed. Covering the whole wafer withthick copper creates stress which causes the process problem. This is awaste of copper. The removed copper is often contaminated and may not beable to be reused.

Furthermore, in the selective deposition process of the invention, thethickness of selective electroplated metal is defined by the thicknessof photoresist, which can be formed as thick as 100 microns. In otherwords, it is feasible and cost-effective to form thick metal byselective electroplating. By contrast, it is technically difficult toform thick metal by a damascene copper process. A primary limitation toforming thick copper damascene lines is the thickness of the chemicalvapor deposited (CVD) oxides which define the damascene copperthickness. CVD oxides cannot be thickly deposited due to stressconcerns. It is also very expensive to deposit thick CVD oxides.

After electroplating, photoresist 94 is removed, as shown in FIG. 6.Glue/barrier Layer 88 and gold seed layer 90 are now removed, as shownin FIG. 7, by etching, using bulk Au layer 92 as a mask. During theself-aligned wet etching of the adhesion/barrier layer, an undercut 89is formed in the adhesion/barrier layer, as shown in FIG. 16. Theundercut is usually between 0.1 to 1.0 micron per side, depending onetching recipe and over-etch time.

One coil of inductor 40 is shown, but it would be understood that thecomplete inductor would be formed at the same time.

The structure of the post-passivation metal interconnect and device,such as the inductor coil 40 shown, is different from the structure ofthe fine line metallization. In addition to the undercut 89 in theadhesion/barrier layer, there is a clear boundary between the sputteredthin gold layer 90 and the electroplated thick gold 92. This can beseen, for example, in a transmission electron microscope (TEM) image.The boundary is due to different grain sizes and/or grain orientation inthe two gold layers 90 and 92. For example, in a 1,000 Angstroms thicksputtered gold layer 90 under a 4 microns thick electroplated gold layer92, the grain size of the sputtered gold layer 90 is about 1,000Angstroms, and the grain boundary is perpendicular to the surface ofsubstrate. The grain size of the electroplated gold 92 is greater than 2microns with the grain boundary not perpendicular, and typically, at anangle of about 45 degrees from the substrate surface. In the fine linemetal interconnections, there is no undercutting or clear boundary ofgrain size difference inside the aluminum layer.

In another feature of the invention, polymer opening 87 may be onlypartially filled, as shown in FIGS. 8-9, which provides tight designrules for fine-pitch inductors. The design rule of polymer opening 87 istypically about 15 um, while the metal traces of inductor are as tightas a 4 um pitch. Therefore, patterning metal inside the polyimideopening is a very important feature of this technology.

Glue/barrier layer 88 and Au seed layer 90 are sputtered as previouslydescribed, and photoresist 95 formed as shown in FIG. 8, followed byelectroplating gold bulk layer 92. Photoresist 95 is then stripped, andthe seed layer and glue/barrier etched as previously described, and asshown in FIG. 9.

In another embodiment of the invention, copper may be used as the bulkmetal in the post-passivation metallization scheme. The FIG. 4 structureis a starting point. Next, as shown in FIG. 10, a glue/barrier layer 100of TiW, TiN, TaN, Cr, or Ti is sputter deposited to a thickness ofbetween about 200 and 2000 Angstroms. Next, a Cu seed layer 102 issputter deposited to a thickness of between about 2,000 and 10,000Angstroms. Bulk layer 104 of Cu is next electroplated to a thickness ofbetween about 3 and 20 .mu.mmicrometers, also using a photoresist 94′and conventional lithography to define the areas to be electroplated inthe selective deposition process of the invention. Finally, an optionalcap layer 106 comprising Ni may also be formed, also by electroplating,to a thickness of between about 0.1 and 3 um.

Referring to FIG. 11, photoresist 94′ is stripped, exposing Cu seedlayer 102. Glue/barrier layer 100 and Cu seed layer 102 are now removed,as shown in FIG. 21, by etching. The bulk Cu layer 104 is used as a maskfor this etch. In this case, there is an undercut at the edge of theglue/barrier layer 100 (Cr or Ti layer).

If the optional Ni cap layer 106 is used, it acts as an etch stop duringthe etching of glue/barrier 100 and seed layer 102. With the Ni cap, afaster Cu etch recipe can be used for removing the seed layer sincethere is no loss of Cu bulk in this configuration. In this case, thereis an undercut in the bulk copper layer 104 and seed copper layer 102,in addition to the undercut in the glue/barrier layer 100. In otherwords, there is an overhang of the Ni cap at the edge of the bulk copperlayer 104 and seed copper layer 102.

One coil of inductor 40 is shown, but it would be understood that thecomplete inductor would be formed at the same time.

As described above, an undercut 101 in the adhesion/barrier layer isformed during etching of that layer in the post-passivation metalprocess. Additionally, the adhesion/barrier layer 100 in thepost-passivation metal structure is formed only under the copper line,as shown in FIG. 12. In the copper damascene process of the fine linemetallization, an adhesion/barrier layer is needed not only at thebottom, but also at the sidewalls of the copper line. This is neededprimarily to protect the underlying active devices from copper ions.However, in the post-passivation scheme of the invention, thepassivation layer 84 provides the barrier to copper ions.

In another feature of the invention and as earlier described, polymeropening 87 may be only partially filled, as shown in FIGS. 13-14.Glue/barrier layer 100 and Cu seed layer 102 are sputtered as previouslydescribed, and photoresist 95′ formed as shown in FIG. 13, followed byelectroplating Cu bulk layer 104 and Ni 106. Photoresist 95′ is thenstripped, and the seed layer and glue/barrier etched as previouslydescribed, and as shown in FIG. 14.

Referring now to FIG. 15, layers similar to earlier descriptions areshown whereby in this case no layer of polyimide has been deposited overthe layer of passivation. An inductor 19 has been created on the surfaceof layer 18 of passivation. The ohmic resistivity of the metal that isused for inductor 19 must be as low as possible. For this reason, theuse of a thick layer of, for instance, gold is preferred for theformation of inductor 19. It has been shown that a thick layer of goldincreased the Q value of inductor 19 from about 5 to about 20 for 2.4GHz applications.

The FIG. 15 inductor may be connected to other elements in variousconfigurations, as earlier described and as shown in the related patentapplications.

An additional layer of polymer 21 may optionally be formed over inductor19.

FIGS. 16 a-16 b depict a transformer made according to the invention.The transformer consists of bottom coil 60, and top coil 62, isolated bya dielectric layer 47. Polymer layers 20, 47 and 64 are formed, andcomprise materials, previously described. Openings 66 are provided intop polymer layer 64 for connections to the top coil 62.

FIG. 16 b is a cross-sectional representation of a transformer of theinvention, in which the bottom coil 60 is formed directly on passivationlayer 18. Solenoid and toroidal inductors may be fabricated in the sameway, as described in related patent applications MEG02-016, Ser. No.10/445,558, filed on May 27, 2003, MEG02-017, Ser. No. 10/445,559, filedon May 27, 2003, and MEG02-018, Ser. No. 10/445,560, filed on May 27,2003, herein incorporated by reference in their entirety.

Besides inductors, it is very useful to form other passive devices, suchas capacitors and resistors, using the method and structure of theinvention.

FIG. 17 a is a cross section of a capacitor that has been created over asubstrate 10. A layer (or layers) 14 of fine line conductiveinterconnect lines and contact points 16 have been created oversubstrate 10. A layer 18 of passivation has been deposited over layer14, with openings created in layer 18 of passivation through whichcontact pads 16 can be accessed.

A capacitor contains, as is well known, a lower plate, an upper plateand a layer of dielectric that separates the upper plate from the lowerplate. FIG. 17 a includes lower plate 42, upper plate 45, and dielectriclayer 46. The upper and lower plates are formed as earlier described,using electroplated Au or Cu for the bulk metals. An optional protectivepolymer, preferably polyimide, may be formed over the capacitor.Contacts to the capacitor may be made as described in the related patentapplications for inductor terminals (both down, one up and one down, orboth up).

Lower plate 42 is formed to a thickness of between about 0.5 and 20.mu.mmicrometers. Layer 46 of dielectric is between about 500 and 50,000Angstroms. Upper plate 45 is between about 0.5 and 20 .mu.mmicrometersthick.

The post-passivation capacitor shown in cross section in FIG. 17 a has:

reduced parasitic capacitance between the capacitor and the underlyingsilicon substrate

allowed for the use of a thick layer of conductive material for thecapacitor plates, reducing the resistance of the capacitor; this isparticularly important for wireless applications

can use high-dielectric-constant material in addition to a polymer, suchas TiO.sub.2 or Ta.sub.2O.sub.5, Si.sub.3N.sub.4 or SiO.sub.2, for thedielectric between the upper and the lower plate of the capacitor,resulting in a higher capacitive value of the capacitor.

The capacitor of FIG. 17 a may alternately be formed above a polymerlayer (deposited over passivation 18), similar to the transformer ofFIG. 16 a.

Dielectric layer 46 is formed of a high-K dielectric material such asSi.sub.3N.sub.4, TEOS, Ta.sub.2O.sub.5, TiO.sub.2, SrTiO.sub.3, or SiON,which are typically deposited by CVD (Chemical Vapor Deposition).

Alternately, the dielectric layer 46 can be a polymer film, includingpolyimide, benzocyclobutene (BCB), parylene or an epoxy-based materialsuch as photoepoxy SU-8.

FIGS. 17 b-17 c show a cross section where, as in FIG. 17 a, a capacitoris created. In the cross section that is shown in FIG. 17 b a thicklayer 20 of polymer has been deposited over the surface of thepassivation layer 18 and has been patterned in order to make the contactpads 16 accessible though the thick layer 20 of polymer. FIG. 17 b showsthe polymer vias having a smaller via diameter than the vias createdthrough the layer of passivation. It is however preferred, as shown inFIG. 17 c, that larger vias be used in conjunction with smallerpassivation vias. The thick layer 20 of polymer moves most of thecapacitor, that is the lower plate 42, the upper plate 45 and thedielectric 46, further from the surface of substrate 10 by a distanceequal to the thickness of layer 20. It has previously been stated thatthe range of polyimide thickness can vary from 2 .mu.mmicrometers to 150.mu.mmicrometers, depending on electrical design requirements. Thisleads to a significant increase in distance between the capacitor andunderlying structures, including metal lines and/or the siliconsubstrate, so that parasitic capacitance is significantly reduced.

FIGS. 17 a-17 c depict both capacitor terminals being connected down toa lower layer. The capacitor may also be contacted in one-up-one-downconfiguration or a two-up technique.

The capacitor of FIGS. 17 a-17 c may optionally be covered with aprotective layer of polymer, as previously described.

FIG. 18 shows a cross section of a substrate 10 over which has beendeposited a layer 18 of passivation, with a resistor 48 formed overpassivation layer 18. A resistor, as is well known, is created byconnecting two points with a material that offers electrical resistanceto the passage of current through the material. For the creation oflayer 48 a resistive material is used, such as TaN, NiCr, NiSn, tungsten(W), TiW, TiN, Cr, Ti, TaSi or Ni. Among these resistive materials, NiCrprovides the best TCR (Temperature Coefficient of Resistance), which canbe as small as 5 ppm/.degree. C. Resistor dimensions such as thickness,length and width of deposition of high resistive material 48 areapplication dependent. The resistor that is shown in cross section inFIG. 18 is, as are the capacitors of FIGS. 17 a-17 c, created in apost-passivation process on the surface of layer 18 of passivation.

FIGS. 19 a-19 b shows the resistor of the invention formed over a thicklayer of polymer 20, connected to contact pads 16. By increasing thedistance between the body of the resistor and the substrate (by thethickness of the polymer layer 20 and other intervening layers) theparasitic capacitance between the body of the resistor and the substrateis reduced, resulting in an improved resistive component (reducedparasitic capacitive loss, improved high frequency performance).

FIGS. 18, 19 a and 19 b show a “two-down” system for contacting theterminals of the resistor 48. The resistor may also be contacted inone-up-one-down configuration.

An additional layer of polymer, to protect the resistor, may optionallybe formed over the resistor of FIGS. 18, 19 a and 19 b.

Further applications of the post-passivation processing of the inventionare shown in FIGS. 20 and 21, which concentrate on making contact pointsbetween contact pads 16 and an overlying electric component, such as adiscrete inductor, capacitor, resistor or other passive device.Interconnect metal 50 of the invention is formed in polymer openings, aspreviously described, which are aligned with smaller passivationopenings, to connect to pads 16, and serves as an under-bump metal(UBM). Solder contact bumps are formed over UBM 50 using conventionalmethods of solder deposition (selective plating, ball mounting, orscreen printing on the surface of contacts 50), the application of aflux on the deposited solder and flowing the solder. A discrete device54 is connected to solder balls 52 and has solder 53 to facilitate theconnection. This is similar to the surface mount technology used in theassembly of printed circuit boards. The discrete electrical componentmay be, but is not limited to, devices such as inductors, capacitors orresistors.

FIG. 21 illustrates mounting of discrete device 54, using solder bumps56, and UBM 50, directly over passivation layer 18.

The discrete components of FIGS. 20 and 21 have the advantages ofperformance and cost savings since the discrete component does not haveto be mounted on a Printed Circuit Board as is the common practice inthe art.

UBM 50 is formed using the metallization scheme of the invention (asshown and described with respect to FIGS. 10-12), except that a thicklayer of solder 52 (about 5 to 100 microns) is electroplated on top ofNi 106 (refer to FIG. 10), before the photoresist 94 stripping. Morespecifically, the UBM 50 in this case comprises Ti or Cr as the adhesionlayer, sputtered Cu as seed layer, and electroplated Cu and Ni as thesolder diffusion barrier layer. If the solder layer 52 is formed byscreen printing or solder ball mounting, the UBM layer 50 is prepared asfollows: again following the process steps in FIGS. 10-12, except that athin layer of gold is electroplated on top of Ni 106 (refer to FIG. 10),before the photoresist 94 stripping. The thinner range of gold ispreferable to avoid a high gold concentration in the solder near theUBM/solder interface, after solder screen printing or solder ballmounting, and reflow processing. More specifically, the UBM 50 in thiscase comprises Ti or Cr as the adhesion layer, sputtered Cu as seedlayer, electroplated Cu and Ni as the solder diffusion barrier layer,and a thin layer of gold as the solder wettable layer.

The invention and its various features provide the advantages of:

the discrete components provide optimized parameters and can be mountedclose to the circuits, which offer true system-on-chip performance

the discrete components mounting close to the circuits also minimizesparasitics

the post-passivation process of the invention allows for the selectionof discrete component design parameters that result in reducedresistance of the discrete capacitor and the discrete inductor, this isfurther clear from the following comparison between prior art processesand the processes of the invention.

Prior approaches in the art use thinner metal for inductors, requiringwider coils (to minimize resistance), resulting in increased surfacearea, increasing the parasitic capacitance of the inductor and causingeddy current losses in the surface of the substrate.

The present invention by contrast, can use easily formed thick metallayers, the thickness reducing resistance. Use of polymer 20 furtherseparates the components formed from underlying structures, reducingcapacitance. With the reduced capacitance, a higher frequency ofoperation results due to a higher resonant frequency.

Resistance of metal interconnections in an integrated circuit isdetermined by the material to be used and metal thickness and width,while capacitance is related to dielectric types, thickness, and metalline width and spacing. In a first example, assuming an extreme case ofthe topmost layer of the fine line metals, fine line metal thickness isabout 2 .mu.mmicrometers, fine line IMD thickness is about 2.mu.mmicrometers, and the line spacing is about 10 .mu.mmicrometers.Post-passivation metal thickness is about 5 .mu.mmicrometers, dielectricthickness is about 5 .mu.mmicrometers, and lines spacing is also about10 .mu.mmicrometers. The metal thickness difference results in about 2.5times reduction in resistance in the post-passivation metal structureover the fine line metal structure. The dielectric thickness results inabout 2.5 times difference in capacitance in the post-passivation metalstructure over the fine line metal structure. Then, the reduction inresistance times capacitance (RC product) is 6.25 times, or about 5times. Increasing the line spacing of the post-passivation metalstructure so that the capacitance decreases further by about 2.5 timeswill result in an RC product that is about 10 times smaller than the RCproduct of the fine line metal structure.

In a second example, fine line metal thickness is about 0.4.mu.mmicrometer, fine line IMD thickness is about 0.4 .mu.mmicrometer,and the line width is about 0.2 .mu.mmicrometer. Post-passivation metalthickness is about 5 .mu.mmicrometers, dielectric thickness is about 5.mu.mmicrometers, and line width is about 10 .mu.mmicrometers. The metalthickness difference results in about 12.5 times reduction in resistancein the post-passivation metal structure over the fine line metalstructure, the dielectric thickness results in a 4 times 12.5 differencein capacitance in the post-passivation metal structure over the fineline metal structure, and the line width difference results in about 50times difference in capacitance in the post-passivation metal structureover the fine line metal structure. Then, the reduction in RC product is7,800 times. However, typically the line spacing in the post passivationmetallization would be greater than that in the fine line metallization,so the difference in RC product will be greater than 10,000 times.

In another example, if the sheet resistance of the post-passivationmetal of the invention is about 10 times smaller than that of the fineline metal (because of the metal thickness difference) and the totalcapacitance of the post-passivation metal line is also about 10 timessmaller than the capacitance of the fine line metal (because of thethickness difference of the dielectric), then the RC product is about100 times smaller than that of the fine line metal. If the width of thepost-passivation metal is additionally about 10 times wider than thefine line metal, the resistance of the post-passivation about 100 timessmaller than the fine line metal. This makes the RC product of thepost-passivation metal about 1000 times smaller than the RC product ofthe fine line metal. Thus, the RC product of the post-passivation metalstructure can be between about 5 to 10,000 times smaller than the RCproduct of the fine line metal structure.

It is difficult to achieve 100 times smaller RC product for the toplayer metal of a fine line metallization system, when compared to thebottom layer metal in the fine line metal interconnection process. Forexample, the metal line resistance at the top layer metal can be reducedby designing a wide piece of metal, however, this will increase thecapacitance of that metal line accordingly (because the IMD is thin).Essentially, it is hard for fine line IC metals to achieve even 10 timessmaller RC product for its top metal layer versus its bottom metallayer.

Although the preferred embodiment of the present invention has beenillustrated, and that form has been described in detail, it will bereadily understood by those skilled in the art that variousmodifications may be made therein without departing from the spirit ofthe invention or from the scope of the appended claims.

What is claimed is:
 1. A post passivation system, comprising: asemiconductor substrate; fine line metal interconnection comprising oneor more layers of metals overlying said semiconductor substrate; apassivation layer overlying said fine line metal interconnection,wherein said passivation layer comprises at least one passivationopening through which is exposed at least one top level metal contactpoint on said fine line metal interconnection; and a post-passivationmetal structure comprising one or more layers of metals formed over saidpassivation layer and connected to said at least one top level metalcontact point wherein said passivation opening's width is larger thanabout 0.1 um.
 2. The system of claim 1 further comprising a polymerlayer formed over said passivation layer and under said post-passivationmetal structure.
 3. The system of claim 2 wherein said polymer layer hasat least one polymer opening, wherein said polymer opening is alignedwith said passivation opening.
 4. The system of claim 3 wherein saidpolymer opening is larger than said passivation opening.
 5. The systemof claim 4, wherein said post-passivation metal structure is connectedto one or more of said top level metal contact points through saidpolymer opening and said passivation opening.
 6. The system of claim 5,wherein metal used to form said post-passivation metal structure and toconnect said post-passivation metal structure to said one or more ofsaid top level metal contact points completely covers sidewalls of saidpolymer opening.
 7. The system of claim 5, wherein metal used to formsaid post-passivation metal structure and to connect saidpost-passivation metal structure to said one or more of said top levelmetal contact points only partially covers sidewalls of said polymeropening.
 8. The system of claim 2 wherein said polymer layer comprisespolyimide, benzocyclobutene (BCB), parylene or an epoxy-based material.9. The system of claim 1 wherein said post-passivation metal structurecomprises metal interconnections, an inductor, a transformer, acapacitor, a resistor, a metal surface for surface mounting a discreteelectrical component, or combinations of some or all of thesestructures.
 10. The system of claim 1 wherein silicon-based oxides areused as intermetal dielectric material in said fine line metalinterconnection and wherein a polymer is used as an intermetaldielectric material in said post-passivation metal structure.
 11. Thesystem of claim 10 wherein said silicon-based oxides comprise CVDsilicon oxide, CVD TEOS, SOG, FSG, high density plasma CVD oxides, or acomposite layer formed by a portion of these materials.
 12. The systemof claim 10 wherein said polymer comprises polyimide, benzocyclobutene(BCB), parylene or an epoxy-based material.
 13. The system of claim 1wherein said each layer of said post-passivation metal structurecomprises a three layer stack, formed of a glue/barrier layer, a seedlayer over said glue/barrier layer, and a bulk layer over said seedlayer.
 14. The system of claim 13 wherein said glue/barrier layer isTiW, TaN, Cr, Ti, or TiN, said seed layer is Au, and said bulk layer isAu.
 15. The system of claim 13 wherein said glue/barrier layer is Cr,Ti, TiW, TiN, or TaN, said seed layer is Cu, and said bulk layer is Cu.16. The system of claim 15 further comprising a cap layer of Ni formedover said bulk layer of Cu.
 17. The system of claim 13 wherein eachlayer of said fine-line metal interconnection comprises a single bulklayer of aluminum and wherein said post-passivation metal structurecomprises said seed layer and said bulk layer comprising a same metalwherein a clear boundary exists between said seed layer and said bulklayer, and wherein there is different grain size and/or orientation onthe two sides of said boundary.
 18. The system of claim 17 wherein eachlayer of said fine-line metal interconnection further comprises anadhesion/barrier layer under said single bulk layer of aluminum.
 19. Thesystem of claim 17 wherein each layer of said fine-line metalinterconnection further comprises a cap metal layer over said singlebulk layer of aluminum.
 20. The system of claim 13 wherein each layer ofsaid fine line metal interconnection is a layer of copper surrounded ona bottom and all sides with an adhesion/barrier layer wherein saidadhesion/barrier layer is not undercut and wherein each layer of saidpost-passivation metal structure comprises said three layer stackwherein said glue/barrier layer does not surround said bulk layer on itssides and wherein said glue/barrier layer has an undercut under saidseed layer.
 21. The system of claim 1 further comprising a protectivelayer of polymer formed over said post-passivation metal structure andover said passivation layer.
 22. The system of claim 1 wherein a firstproduct of resistance of said post-passivation metal structure timescapacitance of said post-passivation metal structure is smaller than asecond product of resistance of said fine line metal interconnectionstimes capacitance of said fine line metal interconnections by at leasttimes.
 23. The system of claim 22 wherein said first product is smallerthan said second product by at least 10 times.
 24. The system of claim22 wherein said first product is smaller than said second product by atleast 100 times.
 25. The system of claim 22 wherein said first productis smaller than said second product by at least 1000 times.
 26. Thesystem of claim 22 wherein said first product is smaller than saidsecond product by at least 10,000 times.
 27. The system of claim 1wherein a first product of resistance of said post-passivation metalstructure times capacitance of said post-passivation metal structure issmaller than a second product of resistance of said fine line metalinterconnections times capacitance of said fine line metalinterconnections by between about 5 and 10,000 times.
 28. A postpassivation system, comprising: a semiconductor substrate; fine linemetal interconnection comprising one or more layers of metals overlyingsaid semiconductor substrate; a passivation layer overlying said fineline metal interconnection, wherein said passivation layer comprises atleast one passivation opening through which is exposed at least one toplevel metal contact point on said fine line metal interconnection; apost-passivation metal structure comprising one or more layers of metalsformed over said passivation layer; and metal interconnections, formedof a same material as said post-passivation metal structure and formedover said passivation layer and connected to said at least one top levelmetal contact point wherein said passivation opening's width is largerthan about 0.1 um and wherein a first product of resistance of saidpost-passivation metal structure and metal interconnections timescapacitance of said post-passivation metal structure and metalinterconnections is smaller than a second product of resistance of saidfine line metal interconnections times capacitance of said fine linemetal interconnections by at least 5 times.
 29. The system of claim 26further comprising a polymer layer formed over said passivation layerand under said post-passivation metal structure and said metalinterconnections.
 30. The system of claim 29 wherein said polymer layercomprises polyimide, benzocyclobutene (BCB), parylene or an epoxy-basedmaterial.
 31. The system of claim 30 wherein said post-passivation metalstructure comprises an inductor, a transformer, a capacitor, a resistor,a metal surface for surface mounting a discrete electrical component, orcombinations of some or all of these structures.
 32. The system of claim30 wherein silicon-based oxides are used as intermetal dielectricmaterial in said fine line metal interconnection and wherein a polymeris used as an intermetal dielectric material in said post-passivationmetal structure and said metal interconnections.
 33. The system of claim32 wherein said silicon-based oxides comprise CVD silicon oxide, CVDTEOS, SOG, FSG, high density plasma CVD oxides, or a composite layerformed by a portion of these materials.
 34. The system of claim 32wherein said polymer comprises polyimide, benzocyclobutene (BCB),parylene or an epoxy-based material.
 35. The system of claim 26 whereineach layer of said post-passivation metal structure and said metalinterconnections comprises a three layer structure, formed of a bottomglue/barrier layer, a seed layer over said bottom glue/barrier layer,and a bulk layer over said seed layer.
 36. The system of claim 35wherein said bottom glue/barrier layer is TiW, TiN, TaN, Ti, or Cr, saidseed layer is Au, and said bulk layer is Au.
 37. The system of claim 35wherein said bottom glue/barrier layer is Cr, Ti, TiW, TiN, or TaN, saidseed layer is Cu, and said bulk layer is Cu.
 38. The system of claim 37further comprising a cap layer of Ni formed over said bulk layer of Cu.39. The system of claim 35 wherein each layer of said fine-line metalinterconnection comprises a single bulk layer of aluminum and whereinsaid post-passivation metal structure and said metal interconnectionscomprise said seed and bulk layers comprising a same metal wherein aclear boundary exists between said seed layer and said bulk layerwherein there is different grain size and/or orientation on the twosides of said boundary.
 40. The system of claim 39 wherein each layer ofsaid fine-line metal interconnection further comprises anadhesion/barrier layer under said single bulk layer of aluminum.
 41. Thesystem of claim 39 wherein said each layer of said fine-line metalinterconnection further comprises a cap metal layer over said singlebulk layer of aluminum.
 42. The system of claim 41 wherein each layer ofsaid fine line metal interconnection is a layer of copper surrounded ona bottom and all sides with an adhesion/barrier layer wherein saidadhesion/barrier layer is not undercut and wherein each layer of saidpost-passivation metal structure and said metal interconnectionscomprises said three layer stack wherein said bottom glue/barrier layerdoes not surround said bulk layer on its sides and wherein saidglue/barrier layer has an undercut under said seed layer.
 43. The systemof claim 26 further comprising a protective layer of polymer formed oversaid post-passivation metal structure and over said passivation layer.44. The system of claim 26 wherein said first product is smaller thansaid second product by at least 10 times.
 45. The system of claim 26wherein said first product is smaller than said second product by atleast 100 times.
 46. The system of claim 26 wherein said first productis smaller than said second product by at least 1000 times.
 47. Thesystem of claim 26 wherein said first product is smaller than saidsecond product by at least 10,000 times.
 48. The system of claim 26wherein said first product is smaller than said second product by about5 to 10,000 times.
 49. A method of forming a post passivation system,comprising: providing a semiconductor substrate; providing fine linemetal interconnection comprising one or more layers of metals overlyingsaid semiconductor substrate formed by a blanket metal depositionprocess; providing a passivation layer overlying said fine line metalinterconnection, wherein said passivation layer comprises at least onepassivation opening through which is exposed at least one top levelmetal contact point on said fine line metal interconnection; and forminga post-passivation metal structure comprising one or more layers ofmetals formed over said passivation layer by a selective metaldeposition process and connected to said at least one top level metalcontact point wherein said at least one passivation opening is formed toa width larger than about 0.1 um.
 50. The method of claim 49 furthercomprising forming a polymer layer over said passivation layer and undersaid post-passivation metal structure.
 51. The method of claim 50wherein said polymer layer has at least one polymer opening, whereinsaid polymer opening is aligned with said passivation opening.
 52. Themethod of claim 51 wherein said polymer opening is formed larger thansaid passivation opening.
 53. The method of claim 52 wherein saidpost-passivation structure is connected to one or more of said top levelmetal contact points through said polymer opening and said passivationopening.
 54. The method of claim 53 wherein metal used to form saidpost-passivation metal structure and to connect to said one or more ofsaid top level metal contact points is formed to completely coverssidewalls of said polymer opening.
 55. The method of claim 53 whereinmetal used to form said post-passivation metal structure and to connectto said one or more of said top level metal contact points is formed toonly partially cover sidewalls of said polymer opening.
 56. The methodof claim 50 wherein said polymer layer comprises polyimide,benzocyclobutene (BCB), parylene or an epoxy-based material.
 57. Themethod of claim 50 wherein said polymer layer is deposited by spincoating, by screen printing, or by laminating a dry film of saidpolymer.
 58. The method of claim 49 wherein said post-passivation metalstructure comprises metal interconnections, an inductor, a transformer,a capacitor, a resistor, a metal surface for surface-mounting a discreteelectrical component, or combinations of some or all of thesestructures.
 59. The method of claim 49 wherein silicon-based oxides areused as intermetal dielectric material in said fine line metalinterconnection and are deposited by chemical vapor deposition andwherein a polymer is used as an intermetal dielectric material in saidpost-passivation metal structure and is deposited by spin coating, byscreen printing, or by laminating a dry film of said polymer.
 60. Thesystem of claim 59 wherein said silicon-based oxides comprise CVDsilicon oxide, CVD TEOS, SOG, FSG, high density plasma CVD oxides, or acomposite layer formed by a portion of these materials.
 61. The systemof claim 59 wherein said polymer comprises polyimide, benzocyclobutene(BCB), parylene or an epoxy-based material
 62. The method of claim 49wherein said forming said post-passivation metal structure by saidselective metal deposition process comprises: forming a polymer layerover said passivation layer and in said passivation opening; forming atleast one polymer opening in said polymer layer, wherein said polymeropening is aligned with said passivation opening; and providing saidpost-passivation metal structure in said at least one polymer openingand in said passivation opening.
 63. The method of claim 62 wherein saidpolymer is photo sensitive.
 64. The method of claim 49 wherein formingsaid intermetal dielectric layer of said post-passivation metalstructure comprises: forming a next polymer layer over an underlyingpost-passivation metal layer and underlying polymer layer; forming atleast one polymer opening in said next polymer layer, wherein saidpolymer opening is aligned with a contact area of said underlyingpost-passivation metal layer; and providing a next metal layer of saidpost-passivation metal structure in said at least one polymer opening.65. The method of claim 64 wherein said polymer is photo sensitive 66.The method of claim 49 wherein forming each layer of saidpost-passivation metal structure by said selective metal depositionprocess comprises: forming a glue/barrier layer; forming a seed layerover said glue/barrier layer; forming a masking layer over said seedlayer having openings where said post-passivation metal structure is tobe formed; selectively forming a bulk layer over said seed layer exposedwithin said openings; removing said masking layer; removing said seedlayer not covered by said bulk layer; and removing said glue/barrierlayer not covered by said bulk layer.
 67. The method of claim 66 whereinsaid bottom glue/barrier layer is TiW, said seed layer is Au, and saidbulk layer is Au.
 68. The method of claim 67, wherein said bottomglue/barrier of TiW is formed by sputtering, to a thickness of betweenabout 500 and 5000 Angstroms.
 69. The method of claim 67, wherein saidseed layer of Au is formed by sputtering, to a thickness of betweenabout 300 and 3000 Angstroms.
 70. The method of claim 67 wherein saidbulk layer of Au is formed by electroplating, to a thickness of betweenabout 1 and 20 um.
 71. The method of claim 66 wherein said bottomglue/barrier layer is Cr or Ti, said seed layer is Cu, and said bulklayer is Cu.
 72. The method of claim 71 wherein said bottom glue/barrierof Cr or Ti is formed by sputtering, to a thickness of between about 200and 1500 Angstroms.
 73. The method of claim 71 wherein said seed layerof Cu is formed by sputtering, to a thickness of between about 2000 and10,000 Angstroms.
 74. The method of claim 71 wherein said bulk layer ofCu is formed by selective electroplating, to a thickness of betweenabout 2 and 20 μm.
 75. The method of claim 71 further comprising forminga cap layer of Ni formed over said bulk layer of Cu.
 76. The method ofclaim 75 wherein said cap layer of Ni is formed to a thickness ofbetween about 0.1 and 3 um.
 77. The method of claim 49 wherein said fineline metal interconnection is fabricated in a clean room environment ofclass 10 or better and wherein said post-passivation metal structure isfabricated in a clean room environment of class 100 or more.
 78. Themethod of claim 49 wherein said fine line metal interconnection isfabricated using 5× steppers or scanners or better with a photoresistthickness of less than about 5 microns and wherein said post-passivationmetal structure is fabricated using aligners or 1× steppers with aphotoresist thickness of greater than about 5 microns.
 79. The method ofclaim 49 wherein a first product of resistance of said post-passivationmetal structure times capacitance of said post-passivation metalstructure is smaller than a second product of resistance of said fineline metal interconnections times capacitance of said fine line metalinterconnections by at least 10 times.
 80. The method of claim 49wherein a first product of resistance of said post-passivation metalstructure times capacitance of said post-passivation metal structure issmaller than a second product of resistance of said fine line metalinterconnections times capacitance of said fine line metalinterconnections by at least 100 times.
 81. The method of claim 49wherein a first product of resistance of said post-passivation metalstructure times capacitance of said post-passivation metal structure issmaller than a second product of resistance of said fine line metalinterconnections times capacitance of said fine line metalinterconnections by at least 1000 times.
 82. The method of claim 49wherein a first product of resistance of said post-passivation metalstructure times capacitance of said post-passivation metal structure issmaller than a second product of resistance of said fine line metalinterconnections times capacitance of said fine line metalinterconnections by at least 10,000 times.
 83. The method of claim 49wherein a first product of resistance of said post-passivation metalstructure times capacitance of said post-passivation metal structure issmaller than a second product of resistance of said fine line metalinterconnections times capacitance of said fine line metalinterconnections by between about 5 and 10,000 times.